TRANSISTOR Datasheets, Datasheet(PDF) - Toshiba Semiconductor - RN1544 Datasheet, Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor), Rohm - DTA143ZU3HZG Datasheet, Toshiba Semiconductor - RN4901FE Datasheet. 2N3055 Transistor Datasheet pdf, 2N3055 Equivalent. Parameters and Characteristics.
Type Designator: TIP2955
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 90 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 70 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 15 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 3 MHz
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: TO218
TIP2955 Transistor Equivalent Substitute - Cross-Reference Search
TIP2955 Datasheet (PDF)
1.1. tip2955.pdf Size:37K _st2
TIP2955 TIP3055 COMPLEMENTARY SILICON POWER TRANSISTORS n SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The TIP3055 is a silicon epitaxial-base planar NPN transistor mountend in TO-218 plastic package and intented for power switching circuits, series and shunt regulators, output stages and hi-fi amplifiers. 3 The complementary PNP type is the TIP2955. 2 1 TO-218 INTERNAL SCHEMATIC D
1.2. tip2955-3055.pdf Size:47K _st2
TIP2955 TIP3055 ® COMPLEMENTARY SILICON POWER TRANSISTORS STM PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES DESCRIPTION The TIP3055 is a silicon epitaxial-base planar NPN transistor mountend in TO-218 plastic package and intented for power switching circuits, series and shunt regulators, output 3 stages and hi-fi amplifiers. 2 The complementary PNP type is the TIP2955. 1
1.3. tip2955 tip3055.pdf Size:87K _st2
TIP2955 TIP3055 Complementary power transistors Features ¦ Low collector-emitter saturation voltage ¦ Complementary NPN - PNP transistors Applications ¦ General purpose ¦ Audio Amplifier 3 2 1 Description TO-247 The devices are manufactured in epitaxial-base planar technology and are suitable for audio, power linear and switching applications. Figure 1. Internal schematic diagr
1.4. tip3055 tip2955.pdf Size:61K _onsemi
TIP3055 (NPN), TIP2955 (PNP) Complementary Silicon Power Transistors Designed for general-purpose switching and amplifier applications. http://onsemi.com Features • DC Current Gain - 15 AMPERE hFE = 20 - 70 @ IC POWER TRANSISTORS = 4.0 Adc COMPLEMENTARY SILICON • Collector-Emitter Saturation Voltage - 60 VOLTS, 90 WATTS VCE(sat) = 1.1 Vdc (Max) @ IC = 4.0 Adc • Excellent Safe
![Datasheet Datasheet](/uploads/1/2/6/3/126308611/862402274.jpg)
1.5. tip2955.pdf Size:81K _bourns
TIP2955 PNP SILICON POWER TRANSISTOR ? Designed for Complementary Use with the SOT-93 PACKAGE (TOP VIEW) TIP3055 Series ? 90 W at 25°C Case Temperature B 1 ? 15 A Continuous Collector Current C 2 ? Customer-Specified Selections Available 3 E Pin 2 is in electrical contact with the mounting base. MDTRAAA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RA
1.6. tip2955 tip3055.pdf Size:107K _mospec
A A A
1.7. tip2955f tip3055f.pdf Size:290K _cdil
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company POWER TRANSISTORS TIP2955F PNP TIP3055F NPN TO- 3P Fully Isolated Plastic Package B C E Designed for General Purpose Switching and Amplifier Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNIT Collector-Emitter Voltage VCEO 60 V Collector-Emitter Voltage VCER 70 V Collector-Bas
1.8. tip2955.pdf Size:136K _inchange_semiconductor
Inchange Semiconductor Product Specification Silicon PNP Power Transistors DESCRIPTION Ў¤ With TO-3PN package Ў¤ Complement to type TIP3055 Ў¤ 90 W at 25°C case temperature Ў¤ 15 A continuous collector current APPLICATIONS Ў¤ Designed for generalpurpose switching and amplifier applications. PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION TIP2
Datasheet: TIP147T, TIP150, TIP151, TIP152, TIP160, TIP161, TIP162, TIP29, C102, TIP29A, TIP29B, TIP29C, TIP29D, TIP29E, TIP29F, TIP30, TIP3054.
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